The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors

Journal article


Publication Details

Author(s): Hundhausen M
Journal: Journal of Non-Crystalline Solids
Publisher: Elsevier
Publication year: 1996
Volume: 198-200
Pages range: 146
ISSN: 0022-3093


Abstract

The moving-photocarrier-grating (MPG) technique for the determination of the photocarrier lifetime and the carrier mobilities in semiconductors is described. This method utilizes the moving interference pattern generated by the superposition of two frequency shifted laser beams for illumination of the sample. This moving intensity grating induces a short circuit current, jsc, and it is shown how the transport parameters of the sample are extracted from the grating-velocity dependence of jsc. Results for amorphous hydrogenated silicon are presented. The potential of the MPG technique to measure directly the drift velocity of electrons and holes in high electric fields is discussed.


FAU Authors / FAU Editors

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik


How to cite

APA:
Hundhausen, M. (1996). The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors. Journal of Non-Crystalline Solids, 198-200, 146. https://dx.doi.org/10.1016/0022-3093(95)00667-2

MLA:
Hundhausen, Martin. "The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors." Journal of Non-Crystalline Solids 198-200 (1996): 146.

BibTeX: 

Last updated on 2018-09-08 at 05:10