The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Hundhausen M
Zeitschrift: Journal of Non-Crystalline Solids
Verlag: Elsevier
Jahr der Veröffentlichung: 1996
Band: 198-200
Seitenbereich: 146
ISSN: 0022-3093


Abstract

The moving-photocarrier-grating (MPG) technique for the determination of the photocarrier lifetime and the carrier mobilities in semiconductors is described. This method utilizes the moving interference pattern generated by the superposition of two frequency shifted laser beams for illumination of the sample. This moving intensity grating induces a short circuit current, jsc, and it is shown how the transport parameters of the sample are extracted from the grating-velocity dependence of jsc. Results for amorphous hydrogenated silicon are presented. The potential of the MPG technique to measure directly the drift velocity of electrons and holes in high electric fields is discussed.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik


Zitierweisen

APA:
Hundhausen, M. (1996). The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors. Journal of Non-Crystalline Solids, 198-200, 146. https://dx.doi.org/10.1016/0022-3093(95)00667-2

MLA:
Hundhausen, Martin. "The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors." Journal of Non-Crystalline Solids 198-200 (1996): 146.

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Zuletzt aktualisiert 2018-09-08 um 05:10