Piepenbreier B (2004)
Publication Type: Conference contribution
Publication year: 2004
Edited Volumes: IECON Proceedings (Industrial Electronics Conference)
Book Volume: CD
Pages Range: 57
Conference Proceedings Title: The 30th Annual Conference of the IEEE Industrial Electronics Society
Event location: Busan, Korea
DOI: 10.1109/IECON.2004.1433441
A new gate drive for SiC-JFET (Silicon Carbide Junction Field Effect Transistor) is developed and tested on a half-bridge. For the realization of a fast gate drive which offers full protection for the SiC-JFET, a gate drive concept is firstly chosen. The gate drive unit has an output stage made for MOSFETs, a new kind of fast signal isolator, short circuit protection and overvoltage protection. © 2004 IEEE.
APA:
Piepenbreier, B. (2004). Fast Gate Drive for SiC-JFET using a Conventional Driver for MOSFETs and Additional Protections. In The 30th Annual Conference of the IEEE Industrial Electronics Society (pp. 57). Busan, Korea.
MLA:
Piepenbreier, Bernhard. "Fast Gate Drive for SiC-JFET using a Conventional Driver for MOSFETs and Additional Protections." Proceedings of the IECON 2004, Busan, Korea 2004. 57.
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