Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface.

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Bashouti MY, Yousefi P, Ristein J, Christiansen SH
Zeitschrift: Journal of Physical Chemistry Letters
Jahr der Veröffentlichung: 2015
Band: 6
Heftnummer: 19
Seitenbereich: 3988-93
ISSN: 1948-7185


Abstract

Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik
Yousefi, Peyman
Lehrstuhl für Laserphysik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Einrichtungen weiterer Autorinnen und Autoren

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Forschungsbereiche

C Photonic and Optical Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Bashouti, M.Y., Yousefi, P., Ristein, J., & Christiansen, S.H. (2015). Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface. Journal of Physical Chemistry Letters, 6(19), 3988-93. https://dx.doi.org/10.1021/acs.jpclett.5b01918

MLA:
Bashouti, Muhammad Y., et al. "Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface." Journal of Physical Chemistry Letters 6.19 (2015): 3988-93.

BibTeX: 

Zuletzt aktualisiert 2019-17-06 um 14:38