Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy

Hundhausen M, Ley L (2002)

Publication Type: Journal article

Publication year: 2002

Journal

Journal of Applied Physics AIP Publishing

Publisher: American Institute of Physics (AIP)

Book Volume: 91

Pages Range: 1113

Authors with CRIS profile

Martin Hundhausen Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Hundhausen, M., & Ley, L. (2002). Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy. Journal of Applied Physics, 91, 1113.

MLA:

Hundhausen, Martin, and Lothar Ley. "Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy." Journal of Applied Physics 91 (2002): 1113.

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