600 GHz GaAs Schottky Diode Mixer in Split-block Technology

Schür J, Biber S, Cojocari O, Schmidt LP, Hartnagel H (2005)


Publication Language: English

Publication Type: Conference contribution

Publication year: 2005

Edited Volumes: The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005

City/Town: Williamsburg, USA

Pages Range: 469-470

Conference Proceedings Title: {30th }International Conference on Infrared and Millimeter Waves

Event location: Williamsburg, VA

ISBN: 0-7803-9348-1

DOI: 10.1109/ICIMW.2005.1572616

Abstract

In this paper we present measurement results of a micro-machined split-block waveguide mixer for 600 GHz. The mixer implements a planar GaAs Schottky diode on a quartz substrate. Two different diode designs used for this mixer design are compared. The overall performance of the waveguide mixer is demonstrated by measurements of the mixer in a quasi-optical setup at 600 GHz. In this setup we are able to measure single sideband conversion losses of 9-14 dB at 600 GHz and voltage responsivities of 421-1690 mV/mW. © 2005 IEEE.

Authors with CRIS profile

How to cite

APA:

Schür, J., Biber, S., Cojocari, O., Schmidt, L.-P., & Hartnagel, H. (2005). 600 GHz GaAs Schottky Diode Mixer in Split-block Technology. In {30th }International Conference on Infrared and Millimeter Waves (pp. 469-470). Williamsburg, VA: Williamsburg, USA.

MLA:

Schür, Jan, et al. "600 GHz GaAs Schottky Diode Mixer in Split-block Technology." Proceedings of the 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005, Williamsburg, VA Williamsburg, USA, 2005. 469-470.

BibTeX: Download