Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
Beljakowa S, Hauck M, Bockstedte MG, Fromm F, Hundhausen M, Nagasawa H, Weber HB, Pensl G, Krieger M (2014)
Publication Type: Journal article
Publication year: 2014
Journal
Publisher: Trans Tech Publications
Book Volume: 778-780
Pages Range: 265-268
DOI: 10.4028/www.scientific.net/MSF.778-780.265
Abstract
Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the persistent behavior of the electron density η below 50 K. It is experimentally verified that the persistent conductivity results from doped SF bunches, which can be considered nano-polytype inclusions in 3C-SiC. © (2014) Trans Tech Publications, Switzerland.
Authors with CRIS profile
Svetlana Beljakowa
Chair of Applied Physics
Martin Hauck
Chair of Applied Physics
Felix Fromm
Lehrstuhl für Laserphysik
Martin Hundhausen
Lehrstuhl für Laserphysik
Heiko Weber
Chair of Applied Physics
Gerhard Pensl
Chair of Applied Physics
Michael Krieger
Chair of Applied Physics
Involved external institutions
Japan (JP)How to cite
APA:
Beljakowa, S., Hauck, M., Bockstedte, M.G., Fromm, F., Hundhausen, M., Nagasawa, H.,... Krieger, M. (2014). Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures. Materials Science Forum, 778-780, 265-268. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.265
MLA:
Beljakowa, Svetlana, et al. "Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures." Materials Science Forum 778-780 (2014): 265-268.
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