Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
Straubinger T, Bickermann M, Grau M, Hofmann HD, Kadinski L, Müller G, Selder M, Wellmann P, Winnacker A (2000)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2000
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 338-342
Pages Range: 39-42
Conference Proceedings Title: Materials Science Forum (Volumes 338-342)
Event location: Research Triangle Park, North Carolina
DOI: 10.4028/www.scientific.net/MSF.338-342.39
Abstract
The thermal data used were determined from pyrometrical measurements on the top and bottom of the crucible during the experiments and were combined with simulations of the 2-dimensional heat transfer in the assembly. The latter allowed us to obtain the temperatures (source, crystal) inside the reaction chamber which were not assessable by direct measurements.
Authors with CRIS profile
Matthias Bickermann
Technische Fakultät
Georg Müller
Technische Fakultät
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Straubinger, T., Bickermann, M., Grau, M., Hofmann, H.-D., Kadinski, L., Müller, G.,... Winnacker, A. (2000). Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions. Materials Science Forum, 338-342, 39-42. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.39
MLA:
Straubinger, Thomas, et al. "Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions." Materials Science Forum 338-342 (2000): 39-42.
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