Wellmann P, Weingärtner R, Bickermann M, Straubinger T, Winnacker A (2002)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2002
Publisher: Elsevier
Book Volume: 91
Pages Range: 75-78
DOI: 10.1016/S0921-5107(01)00976-X
We report the development of an absorption measurement-based characterization tool for the quantitative determination of doping levels and their lateral distribution in silicon carbide wafers. Calibration plots for the technologically important silicon carbide polytypes 4H-SiC (n-/p-type), 6H-SiC (n-/p-type) and 15R-SiC (n-type) are presented. A review of the underlying physical effects of the measurement procedure as well as a description of the experimental setup is given. The applicability of the characterization tool as a production friendly non-contact wafer quality test is demonstrated by showing several mappings of the lateral doping level distribution. The accuracy of the described measurement procedure is typically 15-20% and is of the same order as its electrical Hall measurement counterpart. (C) 2002 Elsevier Science B.V. All rights reserved.
APA:
Wellmann, P., Weingärtner, R., Bickermann, M., Straubinger, T., & Winnacker, A. (2002). Optical quantitative determination of doping levels and their distribution in SiC. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 91, 75-78. https://dx.doi.org/10.1016/S0921-5107(01)00976-X
MLA:
Wellmann, Peter, et al. "Optical quantitative determination of doping levels and their distribution in SiC." Materials Science and Engineering B-Advanced Functional Solid-State Materials 91 (2002): 75-78.
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