Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autor(en): Wellmann P, Herro ZG, Selder M, Durst F, Püsche R, Hundhausen M, Ley L, Winnacker A
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Verlagsort: Switzerland
Jahr der Veröffentlichung: 2003
Band: 433-436
Tagungsband: Materials Science Forum (Volumes 433-436)
Seitenbereich: 9-12
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


Abstract


We have analyzed the mass transport during physical vapor transport growth of SiC using C-13 for labeling of the SiC gas species (i.e. Si2C and SiC2) paths and digital x-ray imaging in order to monitor the evolution of the SiC crystal and SiC source material. The distribution of (SiC)-C-13 was investigated after growth by Micro-Raman spectroscopy. The slow onset of the C-13 incorporation into the SiC crystal as well as the enrichment of C-13 in the residual source material indicate that the major mass transport is conducted through the center of the source material and not along the hot crucible walls where SiC consumption is observed first. Numerical modeling of sublimation and recrystallization inside the SiC source material has been carried out. Effects like the formation of a condensed disk on top of the source material, consumption of SiC close to the hot crucible walls, etc. are described well. The experimental as well as numerical methods are believed to be useful tools for scaling up current growth setups towards large single crystal diameters.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät


Zitierweisen

APA:
Wellmann, P., Herro, Z.G., Selder, M., Durst, F., Püsche, R., Hundhausen, M.,... Winnacker, A. (2003). Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling. Materials Science Forum, 433-436, 9-12. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.9

MLA:
Wellmann, Peter, et al. "Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling." Materials Science Forum 433-436 (2003): 9-12.

BibTeX: 

Zuletzt aktualisiert 2018-18-09 um 13:46