Structural defects in SiC crystals investigated by high energy x-ray diffraction

Weißer M, Seitz C, Wellmann P, Hock R, Magerl A (2004)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2004

Journal

Publisher: Trans Tech Publications

City/Town: Switzerland

Book Volume: 457-460

Pages Range: 339-342

Conference Proceedings Title: Materials Science Forum (Volumes 457-460)

Event location: Lyon FR

DOI: 10.4028/www.scientific.net/MSF.457-460.339

Abstract

High energy x-ray diffraction (up to 300 keV) has been used to analyse structural defects in an as grown SiC boule with a diameter of 55 nun, a thickness of 20 mm and in a 2 inch wafer. The crystals are 6H SiC grown by PVT method. In the wafer numerous grains can be identified and localised with a mosaicity in the order of 0.05degrees, whereas the whole wafer shows a mosaic spread of around 0.1degrees. The bulk crystal shows a pronounced domain structure and a bending in the lattice plane orientation. The local reflection broadening is between 0.2degrees and 2degrees, while the tilts of the lattice planes over the entire wafer are between 2 and 6degrees (2theta-values).

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How to cite

APA:

Weißer, M., Seitz, C., Wellmann, P., Hock, R., & Magerl, A. (2004). Structural defects in SiC crystals investigated by high energy x-ray diffraction. Materials Science Forum, 457-460, 339-342. https://doi.org/10.4028/www.scientific.net/MSF.457-460.339

MLA:

Weißer, Matthias, et al. "Structural defects in SiC crystals investigated by high energy x-ray diffraction." Materials Science Forum 457-460 (2004): 339-342.

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