Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

Hens P, Künecke U, Konias K, Hock R, Wellmann P (2009)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Book Volume: 615-617

Pages Range: 11-14

Conference Proceedings Title: Materials Science Forum (Volumes 615-617)

DOI: 10.4028/www.scientific.net/MSF.615-617.11

Abstract

Silicon carbide as a material for electronic devices still has Substantial problems concerning its structural quality and defects. It has been shown that dopants call have a big influence on structural properties like poly-type stability and dislocation statistics [1]. We will discuss the effect of an isoelectronic dopant in silicon carbide. Germanium, being a member of the 4(th) group in the periodic table of elements like silicon and carbon, will not influence the electrical properties of the material such as e.g. aluminum. In Our experiments we reached concentrations of up to 1*10(20) cm(-3). We have observed all impact on the polytype stability during sublimation growth with in-situ germanium incorporation. We investigated all influence on the dislocation statistics during growth and, hence, varying germanium concentration. We found only a slight decrease in mobility during Hall measurements but no severe changes in electrical properties of the material.

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How to cite

APA:

Hens, P., Künecke, U., Konias, K., Hock, R., & Wellmann, P. (2009). Germanium Incorporation during PVT Bulk Growth of Silicon Carbide. Materials Science Forum, 615-617, 11-14. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.11

MLA:

Hens, Philip, et al. "Germanium Incorporation during PVT Bulk Growth of Silicon Carbide." Materials Science Forum 615-617 (2009): 11-14.

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