Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching
Wellmann P, Sakwe A, Oehlschläger F, Hoffmann V, Zeimer U, Knauer A (2008)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2008
Journal
Publisher: Elsevier
Book Volume: 310
Pages Range: 955-958
Journal Issue: 5
DOI: 10.1016/j.jcrysgro.2007.11.064
Abstract
We report on molten KOH-based defect etching of GaN epitaxial layers for the quantitative determination of the dislocation density. Etching process parameters were established at 450 degrees C that are suitable to reveal threading edge and threading screw dislocations at the same time and, hence, allow for the quantitative determination of the total dislocation density in the metal organic vapor-phase epitaxy (MOVPE) grown GaN layers. The determined dislocation numbers in the 10(8)cm(-2) range are correlated (i) with the full-width half-maximum of rocking curves of the (3 0 (2) over bar) reflection and (ii) dark spots observed by cathodoluminescence of the etched GaN surfaces. (C) 2007 Elsevier B.V. All rights reserved.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Felix Oehlschläger
Institute Materials for Electronics and Energy Technology (i-MEET)
Involved external institutions
Germany (DE)How to cite
APA:
Wellmann, P., Sakwe, A., Oehlschläger, F., Hoffmann, V., Zeimer, U., & Knauer, A. (2008). Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching. Journal of Crystal Growth, 310(5), 955-958. https://dx.doi.org/10.1016/j.jcrysgro.2007.11.064
MLA:
Wellmann, Peter, et al. "Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching." Journal of Crystal Growth 310.5 (2008): 955-958.
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