In-situ Er-doping of SiC bulk single crystals
Beitrag in einer Fachzeitschrift
(Originalarbeit)
Details zur Publikation
Autor(en): Müller R, Desperrier P, Seitz C, Weißer M, Magerl A, Maier M, Winnacker A, Wellmann P
Herausgeber: Roland Madar, Jean Camassel and Elisabeth Blanquet
Zeitschrift: → Materials Science Forum |
Verlag: Trans Tech Publications
Verlagsort: Switzerland
Jahr der Veröffentlichung: 2004
Band: 457-460
Tagungsband: Materials Science Forum (Volumes 457-460)
Seitenbereich: 723-726
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch
Abstract
In this work the first PVT grown in-situ erbium doped SiC bulk crystal, to our knowledge, is presented. The crystal was characterised by secondary ion mass spectrometry (SIMS) and photoluminescence measurements. SIMS investigations show erbium concentrations in the range of 1.1 (.) 10" cm(-3) to 2.9 (.) 10(14) cm(-3). photoluminescence measurements between 1450 run and 1650 nm were conducted at 19 K, 77 K and 300 K. A distinct luminescence at 1540 nm corresponding to the 4 I-4(13/2) --> I-4(15/2) transition was detected even at room temperature. In the investigated temperature range, luminescence intensity shows only, a slight decrease of 16 %. Measurements with different laser powers suggest a saturation of erbium related luminescence in our experimental conditions.
FAU-Autoren / FAU-Herausgeber
| Wellmann, Peter Prof. Dr.-Ing. |
| | Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) |
|
| Winnacker, Albrecht Prof. Dr. |
| | |
Autor(en) der externen Einrichtung(en)
→ Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics |
Zitierweisen
APA: | Müller, R., Desperrier, P., Seitz, C., Weißer, M., Magerl, A., Maier, M.,... Wellmann, P. (2004). In-situ Er-doping of SiC bulk single crystals. Materials Science Forum, 457-460, 723-726. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.723 |
MLA: | Müller, Ralf, et al. "In-situ Er-doping of SiC bulk single crystals." Materials Science Forum 457-460 (2004): 723-726. |