Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]

Sakwe A, Müller R, Wellmann P (2007)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Erratum

Publication year: 2007

Journal

Journal of Crystal Growth Elsevier

Publisher: Elsevier

Book Volume: 299

Pages Range: 234-234

Journal Issue: 1

DOI: 10.1016/j.jcrysgro.2006.10.196

Authors with CRIS profile

Robin Müller Lehrstuhl für Werkstoffwissenschaften (Allgemeine Werkstoffeigenschaften) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

APA:

Sakwe, A., Müller, R., & Wellmann, P. (2007). Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]. Journal of Crystal Growth, 299(1), 234-234. https://dx.doi.org/10.1016/j.jcrysgro.2006.10.196

MLA:

Sakwe, Aloysius, Robin Müller, and Peter Wellmann. "Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]." Journal of Crystal Growth 299.1 (2007): 234-234.

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