Möckel S, Hölzing A, Hock R, Wellmann P (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2013
Publisher: Elsevier
Book Volume: 535
Pages Range: 133-137
Journal Issue: 1
DOI: 10.1016/j.tsf.2012.11.081
In this work CuInSe (CISe) thin films were fabricated by rapid thermal processing of printed CuIn nanoparticles and thermally evaporated selenium as precursor layer. Research is focused on real-time investigations such as in-situ X-ray diffraction and dynamic scanning calorimetry. These measurements show CISe formation starting at 300 C. Significant amount of intermediate phases as reported for state-of-the-art rapid thermal processing of stacked elemental layer was not observed. The morphology of the nanoparticulate layers was examined by field emission scanning electron microscopy. Grain size developed from nanosized binary CuIn nanoparticles to microsized CISe grains. Porosity decreases in the temperature range from 340 C to 540 C. © 2012 Elsevier B.V.
APA:
Möckel, S., Hölzing, A., Hock, R., & Wellmann, P. (2013). In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium. Thin Solid Films, 535(1), 133-137. https://dx.doi.org/10.1016/j.tsf.2012.11.081
MLA:
Möckel, Stefan, et al. "In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium." Thin Solid Films 535.1 (2013): 133-137.
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