Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
Schimmel S, Kaiser M, Hens P, Jokubavicius V, Liljedahl R, Sun J, Yakimova R, Ou Y, Ou H, Linnarsson MK, Wellmann P, Syväjärvi M (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 740-742
Pages Range: 185-188
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
Event location: St. Petersburg
DOI: 10.4028/www.scientific.net/MSF.740-742.185
Abstract
Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.
Authors with CRIS profile
Saskia Schimmel
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Michl Kaiser
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Philip Hens
Graduiertenzentrum der FAU
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Linköping University
Sweden (SE)
Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH)
Sweden (SE)
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)
Denmark (DK)
Sweden (SE)
Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH)
Sweden (SE)
Technical University of Denmark / Danmarks Tekniske Universitet (DTU)
Denmark (DK)
How to cite
APA:
Schimmel, S., Kaiser, M., Hens, P., Jokubavicius, V., Liljedahl, R., Sun, J.,... Syväjärvi, M. (2013). Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates. Materials Science Forum, 740-742, 185-188. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.185
MLA:
Schimmel, Saskia, et al. "Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates." Materials Science Forum 740-742 (2013): 185-188.
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