DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications

Cojocari O, Biber S, Mottet B, Rodriguez-Girones M, Hartnagel H, Schmidt LP (2005)

Publication Language: English

Publication Type: Journal article

Publication year: 2005

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Publisher: Institute of Physics: Hybrid Open Access

Book Volume: 20

Journal Issue: S. 23-32

DOI: 10.1088/0268-1242/20/1/004

Abstract

This paper presents results which originated from a long-term systematic optimization of surface processing prior to anode formation of THz Schottky-based components. Particularly, four most promising surface-processing approaches are carefully investigated separately and in combination in order to understand the chemical and physical processes occurring on a GaAs surface. A reliable technological approach for anode formation is identified, which exhibits optimal diode characteristics and production repeatability. A model is proposed for the influence of each process on the subsequent one in the fabrication process sequence. DC- and IF-noise measurements are performed using an automated measurement system providing statistically significant data. Very good de-parameters such as a series resistance of Rs = 15 ω, an ideality factor N = 1.168, a reverse current Is = 0.024 fA and an IF-noise temperature of 257 K at 1 mA current bias with a good uniformity are achieved for non-cooled Schottky diodes with an anode diameter of 1 μm. The best noise figure is measured to be as low as 220 K at 3.8 GHz and 1 mA current bias.

Authors with CRIS profile

Stephan Biber Lehrstuhl für Hochfrequenztechnik Lorenz-Peter Schmidt Lehrstuhl für Hochfrequenztechnik

How to cite

APA:

Cojocari, O., Biber, S., Mottet, B., Rodriguez-Girones, M., Hartnagel, H., & Schmidt, L.-P. (2005). DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications. Semiconductor Science and Technology, 20(S. 23-32). https://doi.org/10.1088/0268-1242/20/1/004

MLA:

Cojocari, O., et al. "DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications." Semiconductor Science and Technology 20.S. 23-32 (2005).

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