Technological Issues for Micromachining of New Passive THz-Components Based on Deep-Trench Silicon Etching

Biber S, Schür J, Schmidt LP (2004)


Publication Type: Conference contribution

Publication year: 2004

Edited Volumes: Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics

Pages Range: 145-146

Conference Proceedings Title: {29th } International Conference on Infrared and Millimeter Waves

Event location: Karlsruhe, Germany DE

DOI: 10.1109/ICIMW.2004.1421995

Abstract

We present a survey of the application of micromachining techniques for the fabrication of THz-components. Micro-machining of new THz- devices based on deep trench etching of silicon will be discussed with respect to its capability to generate complex 3-dimensional geometries with high aspect ratios (ARs) and to meet the high mechanical requirements for THz-components. First results for the application of deep trench etching for the design of a branch-line coupler for 600GHz will be discussed. We will emphasize the potential of silicon based microstructures for the manufacturing of new devices and focus on technological issues. © 2004 IEEE.

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How to cite

APA:

Biber, S., Schür, J., & Schmidt, L.-P. (2004). Technological Issues for Micromachining of New Passive THz-Components Based on Deep-Trench Silicon Etching. In {29th } International Conference on Infrared and Millimeter Waves (pp. 145-146). Karlsruhe, Germany, DE.

MLA:

Biber, Stephan, Jan Schür, and Lorenz-Peter Schmidt. "Technological Issues for Micromachining of New Passive THz-Components Based on Deep-Trench Silicon Etching." Proceedings of the Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karlsruhe, Germany 2004. 145-146.

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