Charge carrier diffusion profiles in wide band gap semiconductors

Journal article


Publication Details

Author(s): Ristein J
Journal: Diamond and Related Materials
Publisher: Elsevier
Publication year: 2004
Volume: 13
Pages range: 808
ISSN: 0925-9635


Abstract

Although n-type doping by phosphorous meanwhile opens the route to ambipolar electronics on the basis of diamond, the majority of devices so far realized rely on hole transport only. Unipolar charge carrier diffusion is therefore a widely spread and important phenomenon for diamond electronics. Even without equilibrium between electrons and holes inside the semiconductor, the holes alone will establish a well-defined density and thus potential profile based on the detailed local balance between field and diffusion current. In this paper it will be shown, for holes in diamond as an example, how the basic physics of such diffusion tails can be discussed quantitatively by a simple analytical approach. Depending, as the only boundary condition, on the carrier density enforced at the surface or interface of the semiconductor layer, potential and charge carrier density profiles are established which will be discussed for a semi-infinite and a symmetric finite intrinsic diamond layer of arbitrary thickness. The concepts discussed are relevant for the surface conductivity of diamond, and for hetero-systems like metal contacts, growth sectors with differing doping concentrations, and hetero-junctions of wide band semiconductors in general. © 2003 Elsevier B.V. All rights reserved.


FAU Authors / FAU Editors

Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik


How to cite

APA:
Ristein, J. (2004). Charge carrier diffusion profiles in wide band gap semiconductors. Diamond and Related Materials, 13, 808. https://dx.doi.org/10.1016/j.diamond.2003.11.102

MLA:
Ristein, Jürgen. "Charge carrier diffusion profiles in wide band gap semiconductors." Diamond and Related Materials 13 (2004): 808.

BibTeX: 

Last updated on 2018-09-08 at 11:23