Reversible Basal Plane Hydrogenation of Graphene
Ryu S, Han MY, Maultzsch J, Heinz TF, Kim P, Steigerwald ML, Brus LE (2008)
Publication Status: Published
Publication Type: Journal article
Publication year: 2008
Journal
Publisher: AMER CHEMICAL SOC
Book Volume: 8
Pages Range: 4597-4602
Journal Issue: 12
DOI: 10.1021/nl802940s
Abstract
We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp(3) C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100 similar to 200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.
Authors with CRIS profile
Involved external institutions
United States (USA) (US)How to cite
APA:
Ryu, S., Han, M.Y., Maultzsch, J., Heinz, T.F., Kim, P., Steigerwald, M.L., & Brus, L.E. (2008). Reversible Basal Plane Hydrogenation of Graphene. Nano Letters, 8(12), 4597-4602. https://dx.doi.org/10.1021/nl802940s
MLA:
Ryu, Sunmin, et al. "Reversible Basal Plane Hydrogenation of Graphene." Nano Letters 8.12 (2008): 4597-4602.
BibTeX: Download