Reversible Basal Plane Hydrogenation of Graphene

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autor(en): Ryu S, Han MY, Maultzsch J, Heinz TF, Kim P, Steigerwald ML, Brus LE
Zeitschrift: Nano Letters
Jahr der Veröffentlichung: 2008
Band: 8
Heftnummer: 12
Seitenbereich: 4597-4602
ISSN: 1530-6984


We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp(3) C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100 similar to 200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.

FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik

Autor(en) der externen Einrichtung(en)
Columbia University


Ryu, S., Han, M.Y., Maultzsch, J., Heinz, T.F., Kim, P., Steigerwald, M.L., & Brus, L.E. (2008). Reversible Basal Plane Hydrogenation of Graphene. Nano Letters, 8(12), 4597-4602.

Ryu, Sunmin, et al. "Reversible Basal Plane Hydrogenation of Graphene." Nano Letters 8.12 (2008): 4597-4602.


Zuletzt aktualisiert 2018-10-08 um 21:26