High field transport in the inversion layer of amorphous silicon thin film transistors

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Journal of Non-Crystalline Solids
Verlag: Elsevier
Jahr der Veröffentlichung: 1996
Band: 198-200
Seitenbereich: 230
ISSN: 0022-3093


Abstract

The temperature and field dependence of the channel conductivity of a short-channel amorphous silicon thin film transistor were measured. The data are analyzed in the framework of the effective temperature model in which it is assumed that the transport properties depend only on an effective temperature that is calculated from the electric field and temperature. It is found that this model has to be refined in order to take into account the energy dependence of the localization length of the conduction band tail states and the field dependence of the dimensionless factor entering the formula for the effective temperature.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-07-08 um 15:08