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Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures

Hundhausen M, Ley L (1994)

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Publication Type: Journal article

Publication year: 1994

Journal

Publisher: American Institute of Physics (AIP)

Book Volume: 75

Pages Range: 2690

DOI: 10.1063/1.356222

Abstract

This paper investigates the effect of illumination on the trapping and detrapping properties of individual electronic defect states, by demonstrating this access to the microscopic mechanisms of capture and release of charge carriers at the site of a single trap. The stability of the environment of an individual defect is also probed using the noise behavior. It is concluded that individual defect noise in a-Si:H/a-SiNx:H double barrier structures is affected by low and medium intensity illumination, because of the changed occupation of the trap state responsible for random telegraph noise. High intensity illumination results in metastable modification of the individual defect configuration.

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How to cite

APA:

Hundhausen, M., & Ley, L. (1994). Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures. Journal of Applied Physics, 75, 2690. https://dx.doi.org/10.1063/1.356222

MLA:

Hundhausen, Martin, and Lothar Ley. "Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures." Journal of Applied Physics 75 (1994): 2690.

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