Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures

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Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Journal of Applied Physics
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 1994
Band: 75
Seitenbereich: 2690
ISSN: 0021-8979


Abstract

This paper investigates the effect of illumination on the trapping and detrapping properties of individual electronic defect states, by demonstrating this access to the microscopic mechanisms of capture and release of charge carriers at the site of a single trap. The stability of the environment of an individual defect is also probed using the noise behavior. It is concluded that individual defect noise in a-Si:H/a-SiNx:H double barrier structures is affected by low and medium intensity illumination, because of the changed occupation of the trap state responsible for random telegraph noise. High intensity illumination results in metastable modification of the individual defect configuration.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-09-08 um 04:54