Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique

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Details zur Publikation

Autor(en): Hundhausen M
Zeitschrift: Japanese Journal of Applied Physics
Verlag: Japan Society of Applied Physics
Jahr der Veröffentlichung: 1994
Band: 33
Seitenbereich: L1809
ISSN: 0021-4922


Abstract

In this paper we have determined the lifetime of photogenerated carriers in semiconductors using a technique that does not require time or frequency resolved measurements of the photoconductivity. The lifetime is deduced from the DC-short circuit current that is induced by a laser interference grating of period Λ moving along the semiconductor surface with the velocity vgr. We observe a maximum short circuit current density jsc at a velocity that corresponds to a frequency ω-max$/ = 2πvmax/Λ of the moving interference grating. Based on a theoretical analysis of jsc we show that ω-max$/ equals the inverse of the photocarrier lifetime τ, if the dielectric relaxation-time τdiel is short compared to τ and if the grating period is chosen large compared to the ambipolar diffusion length.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 04:54