Individual electronic defect states in a-Si:H/a-SiNx double barrier structures
Hundhausen M, Ley L (1991)
Publication Type: Journal article
Publication year: 1991
Journal
Publisher: Elsevier
Book Volume: 137&138
Pages Range: 1107
DOI: 10.1016/S0022-3093(05)80316-3
Abstract
Random telegraphic noise (RTN) in large area a-Si:H/a-SiNx:H double barrier structures (DBS) is due to the charging and discharging of individual trap states in the barrier layer. The effective device area is confined to a path of less than 10 μm diameter. This is verified through the local effect a focused laser beam has on the noise characteristics. The capture (τ-c) and emission (τ-e) time constants of the current controlling trap can be determined separately. Temperature and bias dependence of the time constants are discussed within a model of acceptor-like traps with strong electron-lattice coupling that are situated in the nitride barrier and exchange charge with the conduction electrons in the adjacent n+a-Si:H layers. © 1991 Elsevier Science Publishers B.V. All rights reserved.
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How to cite
APA:
Hundhausen, M., & Ley, L. (1991). Individual electronic defect states in a-Si:H/a-SiNx double barrier structures. Journal of Non-Crystalline Solids, 137&138, 1107. https://dx.doi.org/10.1016/S0022-3093(05)80316-3
MLA:
Hundhausen, Martin, and Lothar Ley. "Individual electronic defect states in a-Si:H/a-SiNx double barrier structures." Journal of Non-Crystalline Solids 137&138 (1991): 1107.
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