Individual electronic defect states in a-Si:H/a-SiNx double barrier structures

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Journal of Non-Crystalline Solids
Verlag: Elsevier
Jahr der Veröffentlichung: 1991
Band: 137&138
Seitenbereich: 1107
ISSN: 0022-3093


Abstract

Random telegraphic noise (RTN) in large area a-Si:H/a-SiNx:H double barrier structures (DBS) is due to the charging and discharging of individual trap states in the barrier layer. The effective device area is confined to a path of less than 10 μm diameter. This is verified through the local effect a focused laser beam has on the noise characteristics. The capture (τ-c) and emission (τ-e) time constants of the current controlling trap can be determined separately. Temperature and bias dependence of the time constants are discussed within a model of acceptor-like traps with strong electron-lattice coupling that are situated in the nitride barrier and exchange charge with the conduction electrons in the adjacent n+a-Si:H layers. © 1991 Elsevier Science Publishers B.V. All rights reserved.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-09-08 um 04:54