Random telegraphic noise in large area a-Si:H/a:Si1xNx double barrier structures
Ley L, Hundhausen M (1989)
Publication Type: Journal article
Publication year: 1989
Journal
Publisher: Elsevier
Book Volume: 114
Pages Range: 471
DOI: 10.1016/0022-3093(89)90693-5
Abstract
Random telegraphic noise (RTN) with an amplitude of about 1% has been observed in the current through a-Si:H/a-Si1-xNx:H double barrier structures. The area of the devices, 0.25 mm2, is five orders of magnitude larger than the area of the devices where RTN has previously been observed. The power spectra of the noise can be fitted by a superposition of Lorentzians from which average switching times are deduced. The switching times are thermally activated with activation energies between 0.2 and 0.6 eV and they depend on bias voltage. Assuming that the current through these structures is confined to microchannels of cross section area < 1μm2 the RTN and its characteristics are explained by the random charging and discharging of individual traps placed in the vicinity of the current channel.
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APA:
Ley, L., & Hundhausen, M. (1989). Random telegraphic noise in large area a-Si:H/a:Si1��xNx double barrier structures. Journal of Non-Crystalline Solids, 114, 471. https://doi.org/10.1016/0022-3093(89)90693-5
MLA:
Ley, Lothar, and Martin Hundhausen. "Random telegraphic noise in large area a-Si:H/a:Si1��xNx double barrier structures." Journal of Non-Crystalline Solids 114 (1989): 471.
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