Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface

Journal article

Publication Details

Author(s): Hundhausen M
Journal: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publication year: 1988
Volume: 53
Pages range: 110
ISSN: 0003-6951


A parallel arrangement of thin wires has been fabricated in the Al xGa1-xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.

FAU Authors / FAU Editors

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik

Last updated on 2018-09-08 at 04:39