Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface

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Details zur Publikation

Autor(en): Hundhausen M
Zeitschrift: Applied Physics Letters
Verlag: American Institute of Physics (AIP)
Jahr der Veröffentlichung: 1988
Band: 53
Seitenbereich: 110
ISSN: 0003-6951


A parallel arrangement of thin wires has been fabricated in the Al xGa1-xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.

FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 04:39