Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface

Hundhausen M (1988)


Publication Type: Journal article

Publication year: 1988

Journal

Publisher: American Institute of Physics (AIP)

Book Volume: 53

Pages Range: 110

DOI: 10.1063/1.100384

Abstract

A parallel arrangement of thin wires has been fabricated in the Al xGa1-xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.

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How to cite

APA:

Hundhausen, M. (1988). Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface. Applied Physics Letters, 53, 110. https://dx.doi.org/10.1063/1.100384

MLA:

Hundhausen, Martin. "Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface." Applied Physics Letters 53 (1988): 110.

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