Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon

Ristein J (1985)

Publication Type: Journal article

Publication year: 1985

Journal

Solar Energy Materials Elsevier BV

Publisher: Elsevier BV

Book Volume: 12

Pages Range: 221

DOI: 10.1016/0165-1633(85)90060-7

Abstract

The optical properties of doped glow discharge silicon films have been studied in the range between 0.5 and 10 eV. Boron doping has a strong influence on the covalent network, which becomes obvious from an increase of the refractive index and of the strength of the ε{lunate}2 peak. Comparison of the refractive index in the IR and the UV reflectance points for highly boron-doped samples (> 10³ ppm) to differences between bulk and surface properties which arise probably from a thin hydrogen-rich surface layer. These differences diminish upon annealing at 400°C. Density measurements reveal an increase of the mass density with boron doping which, in highly doped films, is close to the density of crystalline silicon. The influence of phosphorus on the optical properties is smaller and noticeable only at high doping levels. © 1985.

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik

How to cite

APA:

Ristein, J. (1985). Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon. Solar Energy Materials, 12, 221. https://dx.doi.org/10.1016/0165-1633(85)90060-7

MLA:

Ristein, Jürgen. "Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon." Solar Energy Materials 12 (1985): 221.

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