Carrier Recombination Times in Amorphous-Silicon Doping Superlattices

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Physical Review Letters
Verlag: American Physical Society
Jahr der Veröffentlichung: 1984
Band: 53
Seitenbereich: 1598
ISSN: 0031-9007


Abstract

Doping superlattices, i.e., multilayer structures consisting of ultrathin (50 <~d<~400 ) n-type, intrinsic, and p-type layers of a-Si: H (nipi structures), have been produced. Up to a tenfold increase in their infrared photoconductivity after band-gap illumination compared to unstructured a-Si: H is observed. The results are well described by a simple model for the carrier recombination kinetics that takes into account the spatial separation of electrons and holes due to the modulation of the band energies. © 1984 The American Physical Society.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-07-08 um 14:08