Hundhausen M, Ley L (1984)
Publication Type: Journal article
Publication year: 1984
Publisher: American Physical Society
Book Volume: 53
Pages Range: 1598
DOI: 10.1103/PhysRevLett.53.1598
Doping superlattices, i.e., multilayer structures consisting of ultrathin (50 <~d<~400 ) n-type, intrinsic, and p-type layers of a-Si: H (nipi structures), have been produced. Up to a tenfold increase in their infrared photoconductivity after band-gap illumination compared to unstructured a-Si: H is observed. The results are well described by a simple model for the carrier recombination kinetics that takes into account the spatial separation of electrons and holes due to the modulation of the band energies. © 1984 The American Physical Society.
APA:
Hundhausen, M., & Ley, L. (1984). Carrier Recombination Times in Amorphous-Silicon Doping Superlattices. Physical Review Letters, 53, 1598. https://dx.doi.org/10.1103/PhysRevLett.53.1598
MLA:
Hundhausen, Martin, and Lothar Ley. "Carrier Recombination Times in Amorphous-Silicon Doping Superlattices." Physical Review Letters 53 (1984): 1598.
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