Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC
Rankl D, Jokubavicius V, Syväjärvi M, Wellmann P (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2015
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 821-823
Pages Range: 77-80
Conference Proceedings Title: Materials Science Forum (Volumes 821-823)
Event location: Grenoble
ISBN: 9783038354789
DOI: 10.4028/www.scientific.net/MSF.821-823.77
Abstract
We have investigated the crystal growth of 3C-SiC using physical vapor transport growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasiequilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Our interest is in particular to understand how to use sublimation epitaxy experience in 3C-SiC growth to a PVT set up that could open up the possibility of large area bulk growth. As indicative measure, the application to large area growth in a physical vapor transport growth reactor is briefly addressed.
Authors with CRIS profile
Dominik Rankl
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Sweden (SE)How to cite
APA:
Rankl, D., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2015). Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC. Materials Science Forum, 821-823, 77-80. https://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.77
MLA:
Rankl, Dominik, et al. "Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC." Materials Science Forum 821-823 (2015): 77-80.
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