Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation

Zweschke A, Wellmann P (2015)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2015

Journal

Thin Solid Films Elsevier

Publisher: Elsevier

Book Volume: 582

Pages Range: 397-400

DOI: 10.1016/j.tsf.2014.11.002

Abstract

The diffusion processes during chalcopyrite (CuInSe) layer formation by rapid thermal annealing (RTA) of stacked elemental layers are still not completely understood. We present a one-dimensional kinetic model, which describes the diffusive reaction kinetics for layers of partial miscible systems to describe the RTA process. The model was applied to a layer stack of elemental Se between the metallic layers Cu and In. First, some binary phases occur. After the Se layer is consumed, CuInSeis observed between the binary compounds CuSe and InSe.

Authors with CRIS profile

André Zweschke Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

APA:

Zweschke, A., & Wellmann, P. (2015). Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation. Thin Solid Films, 582, 397-400. https://doi.org/10.1016/j.tsf.2014.11.002

MLA:

Zweschke, André, and Peter Wellmann. "Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation." Thin Solid Films 582 (2015): 397-400.

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