Increasing the Fill Factor of Inverted P3HT:PCBM Solar Cells Through Surface Modification of Al-Doped ZnO via Phosphonic Acid-Anchored C60 SAMs

Stubhan T, Salinas Batallas M, Ebel A, Krebs FC, Hirsch A, Halik M, Brabec C (2012)


Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2012

Journal

Original Authors: Stubhan T., Salinas M., Ebel A., Krebs F.C., Hirsch A., Halik M., Brabec C.J.

Publisher: Wiley-VCH Verlag

Book Volume: 2

Pages Range: 532-535

Journal Issue: 5

URI: http://onlinelibrary.wiley.com/doi/10.1002/aenm.201100668/abstract

DOI: 10.1002/aenm.201100668

Abstract

The influence of aluminum-doped zinc oxide (AZO) electron extraction layers modified with self-assembled monolayers (SAMs) on inverted polymer solar cells is investigated. It is found that AZO modification with phosphonic acid anchored Fullerene--SAMs leads to a reduction of the series resistance, while increasing the parallel resistance. This results in an increased efficiency from 2.9 to 3.3%.

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APA:

Stubhan, T., Salinas Batallas, M., Ebel, A., Krebs, F.C., Hirsch, A., Halik, M., & Brabec, C. (2012). Increasing the Fill Factor of Inverted P3HT:PCBM Solar Cells Through Surface Modification of Al-Doped ZnO via Phosphonic Acid-Anchored C60 SAMs. Advanced Energy Materials, 2(5), 532-535. https://dx.doi.org/10.1002/aenm.201100668

MLA:

Stubhan, Tobias, et al. "Increasing the Fill Factor of Inverted P3HT:PCBM Solar Cells Through Surface Modification of Al-Doped ZnO via Phosphonic Acid-Anchored C60 SAMs." Advanced Energy Materials 2.5 (2012): 532-535.

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