Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)

Fromm F, Oliveira MH, Molina-Sanchez A, Hundhausen M, Lopes JMJ, Riechert H, Wirtz L, Seyller T (2013)

Publication Type: Journal article

Publication year: 2013

Journal

New Journal of Physics Institute of Physics: Open Access Journals / Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft

Publisher: Institute of Physics: Open Access Journals / Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft

Book Volume: n/a

Pages Range: n/a

DOI: 10.1088/1367-2630/15/4/043031

Abstract

We report a Raman study of the so-called buffer layer with (6√3 6√3)R30° periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a non-vanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer layer.

Authors with CRIS profile

Felix Fromm Lehrstuhl für Laserphysik Martin Hundhausen Lehrstuhl für Laserphysik

Involved external institutions

Paul-Drude-Institut für Festkörperelektronik - Leibniz-Institut im Forschungsverbund Berlin e.V.

Germany (DE) Technische Universität Chemnitz

Germany (DE) University of Luxembourg

Luxembourg (LU)

How to cite

APA:

Fromm, F., Oliveira, M.H., Molina-Sanchez, A., Hundhausen, M., Lopes, J.M.J., Riechert, H.,... Seyller, T. (2013). Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001). New Journal of Physics, n/a, n/a. https://dx.doi.org/10.1088/1367-2630/15/4/043031

MLA:

Fromm, Felix, et al. "Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)." New Journal of Physics n/a (2013): n/a.

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