Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Bashouti MY, Sardashti K, Ristein J, Christiansen SH
Zeitschrift: Physical Chemistry Chemical Physics
Verlag: Royal Society of Chemistry
Jahr der Veröffentlichung: 2012
Band: 14
Seitenbereich: 11877
ISSN: 1463-9076
eISSN: 1463-9084


Abstract

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is © 2012 the Owner Societies.


FAU-Autoren / FAU-Herausgeber

Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik


Autor(en) der externen Einrichtung(en)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Zitierweisen

APA:
Bashouti, M.Y., Sardashti, K., Ristein, J., & Christiansen, S.H. (2012). Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. Physical Chemistry Chemical Physics, 14, 11877. https://dx.doi.org/10.1039/c2cp41709j

MLA:
Bashouti, Muhammad Y., et al. "Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy." Physical Chemistry Chemical Physics 14 (2012): 11877.

BibTeX: 

Zuletzt aktualisiert 2018-09-08 um 16:08