Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy

Bashouti MY, Sardashti K, Ristein J, Christiansen SH (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Physical Chemistry Chemical Physics Royal Society of Chemistry

Publisher: Royal Society of Chemistry

Book Volume: 14

Pages Range: 11877

DOI: 10.1039/c2cp41709j

Abstract

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is © 2012 the Owner Societies.

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik

Involved external institutions

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE)

How to cite

APA:

Bashouti, M.Y., Sardashti, K., Ristein, J., & Christiansen, S.H. (2012). Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. Physical Chemistry Chemical Physics, 14, 11877. https://dx.doi.org/10.1039/c2cp41709j

MLA:

Bashouti, Muhammad Y., et al. "Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy." Physical Chemistry Chemical Physics 14 (2012): 11877.

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