Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
Weingart S, Bock C, Kunze U, Speck F, Seyller T, Ley L (2009)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2009
Journal
Book Volume: 95
Article Number: 262101
Journal Issue: 26
DOI: 10.1063/1.3276560
Abstract
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R ≈-170 ω, which is measured in a nonlocal, four-terminal configuration at 4.2 and which vanishes as the temperature is increased above 80 K. © 2009 American Institute of Physics.
Authors with CRIS profile
Florian Speck
Lehrstuhl für Laserphysik
Thomas Seyller
Lehrstuhl für Laserphysik
Lothar Ley
Naturwissenschaftliche Fakultät
Additional Organisation(s)
Involved external institutions
Germany (DE)How to cite
APA:
Weingart, S., Bock, C., Kunze, U., Speck, F., Seyller, T., & Ley, L. (2009). Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions. Applied Physics Letters, 95(26). https://dx.doi.org/10.1063/1.3276560
MLA:
Weingart, S., et al. "Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions." Applied Physics Letters 95.26 (2009).
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