Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Weingart S, Bock C, Kunze U, Emtsev K, Seyller T, Ley L
Zeitschrift: Physica E-Low-Dimensional Systems & Nanostructures
Jahr der Veröffentlichung: 2010
Band: 42
Heftnummer: 4
Seitenbereich: 687-690
ISSN: 1386-9477


Abstract

In this work we report on temperature-dependent magnetotransport measurements on epitaxial graphene grown on SiC(0 0 0 1) under different preparation conditions. We demonstrate that the temperature dependence of the charge carrier density and mobility is correlated to the annealing conditions during the graphitization process. As recently shown, SiC substrates annealed in an Ar atmosphere near atmospheric pressure exhibit continuous monolayer graphene films over 2 - 3 μ m wide and more than 50 μ m long terraces. For these films we determine a constant charge carrier density in the range from 1.4 K up to room temperature and an electron mobility exceeding 3000 cm (V s) at low temperatures. © 2009 Elsevier B.V. All rights reserved.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Einrichtungen weiterer Autorinnen und Autoren

Ruhr-Universität Bochum (RUB)


Forschungsbereiche

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Weingart, S., Bock, C., Kunze, U., Emtsev, K., Seyller, T., & Ley, L. (2010). Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties. Physica E-Low-Dimensional Systems & Nanostructures, 42(4), 687-690. https://dx.doi.org/10.1016/j.physe.2009.11.006

MLA:
Weingart, S., et al. "Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties." Physica E-Low-Dimensional Systems & Nanostructures 42.4 (2010): 687-690.

BibTeX: 

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