The quasi-free-standing nature of graphene on H-saturated SiC(0001)

Speck F, Jobst J, Fromm F, Ostler M, Waldmann D, Hundhausen M, Weber HB, Seyller T (2011)

Publication Type: Journal article, Letter

Publication year: 2011

Journal

Publisher: American Institute of Physics (AIP)

Book Volume: 9

Pages Range: 12206

DOI: 10.1063/1.3643034

Abstract

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy, we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p 5.0 - 6.5 10¹² cm ^-2) with a carrier mobility of 3100 cm²/Vs at room temperature. Compared to graphene on the buffer layer, a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001) which justifies the term quasi-free-standing. © 2011 American Institute of Physics.

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APA:

Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M.,... Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters, 9, 12206. https://doi.org/10.1063/1.3643034

MLA:

Speck, Florian, et al. "The quasi-free-standing nature of graphene on H-saturated SiC(0001)." Applied Physics Letters 9 (2011): 12206.

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