Fauster T (1994)
Publication Status: Published
Publication Type: Journal article
Publication year: 1994
Publisher: Elsevier
Book Volume: 307
Pages Range: 264-268
DOI: 10.1016/0039-6028(94)90405-7
The initial stages of ultrathin epitaxial COSi2 formation on Si(111) and Si(100) surfaces were studied by core-level photoelectron spectroscopy with synchrotron radiation. A high surface sensitivity was obtained for electrons with kinetic energy of approximately 30 eV, where the mean free path is estimated to be less than 2.5 angstrom. Our Si2p data show that on Si(111) a part of the Co atoms are in a CoSi2-like environment at room temperature, the rest forms a Co-Si solid solution. For a complete reaction, annealing to approximately 350-degrees-C is needed. In this way we obtain the Co-rich CoSi2(111)-C surface termination free of pinholes which is stable up to at least 460-degrees-C. After annealing to approximately 550-degrees-C the Si-rich CoSi2(111)-S surface termination containing some pinholes appears. Contrary to the Si(111), Co deposition on Si(100) surface at room temperature does not lead to CoSi2 but only to a Co-Si solid solution. For coverages below 2.6 ML heating to approximately 460-degrees-C is necessary to obtain CoSi2, whereas for higher coverages heating to approximately 300-degrees-C is sufficient. This effect is attributed to a change of the Co diffusion mechanism at room temperature. The CoSi2 films on the Si(100) surface produced in this way always contain pinholes.
APA:
Fauster, T. (1994). REACTION OF ULTRATHIN CO LAYERS WITH SI(111) AND SI(100) SURFACES. Surface Science, 307, 264-268. https://dx.doi.org/10.1016/0039-6028(94)90405-7
MLA:
Fauster, Thomas. "REACTION OF ULTRATHIN CO LAYERS WITH SI(111) AND SI(100) SURFACES." Surface Science 307 (1994): 264-268.
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