Pulsed laser deposition of Co and growth of CoSi2 on Si(111)
Löffler M, Cordon J, Weinelt M, Ortega JE, Fauster T (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2005
Journal
Publisher: Springer Verlag (Germany)
Book Volume: 81
Pages Range: 1651-1655
DOI: 10.1007/s00339-005-3374-2
Abstract
Monolayers of Co were prepared by pulsed laser deposition (PLD) and thermal deposition (TD) on Si(111) substrates. The surface structure and morphology were studied as a function of annealing temperature with scanning tunneling microscopy and low-energy electron diffraction (LEED). Comparing PLD to TD in the monolayer regime, we find surface phases with lower Co content in the top layer for annealing temperatures below 500 degrees C, indicating an implantation of Co into the Si substrate. The implanted Co leads to an increased intermixing of Co and Si and a higher density of nucleation centers for Co multilayers produced by PLD compared to TD. Multilayer PLD films therefore show an improved film quality, which is detected by an increased intensity of the LEED reflectivity.
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APA:
Löffler, M., Cordon, J., Weinelt, M., Ortega, J.E., & Fauster, T. (2005). Pulsed laser deposition of Co and growth of CoSi2 on Si(111). Applied Physics A: Materials Science and Processing, 81, 1651-1655. https://dx.doi.org/10.1007/s00339-005-3374-2
MLA:
Löffler, Matthias, et al. "Pulsed laser deposition of Co and growth of CoSi2 on Si(111)." Applied Physics A: Materials Science and Processing 81 (2005): 1651-1655.
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