Seubert A, Schardt J, Weiss W, Starke U, Heinz K, Fauster T (2000)
Publication Status: Published
Publication Type: Journal article
Publication year: 2000
Publisher: American Institute of Physics (AIP)
Book Volume: 76
Pages Range: 727-729
DOI: 10.1063/1.125875
The interface structure of ultrathin CoSi2 films grown on Si(111) was investigated by quantitative low-energy electron diffraction. Codeposition of the elements leads to a film composed of domains with two and three Si-Co-Si trilayers in CaF2 structure. As within the film, Co atoms at the interface are eightfold coordinated. The lateral unit cells of the film and substrate are mutually rotated by 60 degrees (B-type orientation). The interfacial trilayer is substantially distorted, its distance to the substrate expanded, and its sublayer spacings considerably modified from the bulk. Also, the substrate's top spacing is expanded. The results compare almost quantitatively with recent density-functional calculations. (C) 2000 American Institute of Physics. [S0003-6951(00)04306-0].
APA:
Seubert, A., Schardt, J., Weiss, W., Starke, U., Heinz, K., & Fauster, T. (2000). Interface structure of ultrathin CoSi2 films epitaxially grown on Si(111). Applied Physics Letters, 76, 727-729. https://doi.org/10.1063/1.125875
MLA:
Seubert, Armin, et al. "Interface structure of ultrathin CoSi2 films epitaxially grown on Si(111)." Applied Physics Letters 76 (2000): 727-729.
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