Wiets M, Weinelt M, Fauster T (2003)
Publication Status: Published
Publication Type: Journal article
Publication year: 2003
Publisher: American Physical Society
Book Volume: 68
Article Number: 125321
DOI: 10.1103/PhysRevB.68.125321
Two-photon photoemission has been used to study the electronic structure of the valence and conduction bands at SiC(0001) surfaces. The various surface reconstructions show distinctly different spectra and work functions. The ionization energy is found independent of polytype and surface reconstruction to be 6.9+/-0.2 eV. For the (root3xroot3)R30degrees surface the occupied and unoccupied Mott-Hubbard bands are found with a splitting U=2.4+/-0.1 eV. A long-lived exciton between the Mott-Hubbard bands is identified with a binding energy of similar to0.7 eV.
APA:
Wiets, M., Weinelt, M., & Fauster, T. (2003). Electronic structure of SiC(0001) surfaces studied by two-photon photoemission. Physical Review B, 68. https://dx.doi.org/10.1103/PhysRevB.68.125321
MLA:
Wiets, Michael, Martin Weinelt, and Thomas Fauster. "Electronic structure of SiC(0001) surfaces studied by two-photon photoemission." Physical Review B 68 (2003).
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