Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy

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Details zur Publikation

Autor(en): Röhrl J, Hundhausen M, Speck F, Seyller T
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Jahr der Veröffentlichung: 2010
Band: 645-648
Seitenbereich: 603
ISSN: 0255-5476
eISSN: 1662-9752


Abstract

The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers. We measured the phonon frequencies by Raman spectroscopy and compare the results between epitaxial layers fabricated by high temperature annealing and by hydrogen intercalation of the covalently bound graphene layer of the 6√3 × 6√3 reconstructed SiC surface. Only the latter graphene layer shows tensile strain, which can partly be explained by lattice mismatch between substrate and epitaxial graphene. © (2010) Trans Tech Publications.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Naturwissenschaftliche Fakultät
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik
Speck, Florian


Zitierweisen

APA:
Röhrl, J., Hundhausen, M., Speck, F., & Seyller, T. (2010). Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy. Materials Science Forum, 645-648, 603. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.603

MLA:
Röhrl, Jonas, et al. "Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy." Materials Science Forum 645-648 (2010): 603.

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