Kutschera M, Groth T, Kentsch C, Shumay I, Weinelt M, Fauster T (2009)
Publication Status: Published
Publication Type: Journal article
Publication year: 2009
Publisher: Institute of Physics: Hybrid Open Access
Book Volume: 21
Article Number: 134006
DOI: 10.1088/0953-8984/21/13/134006
The occupied and unoccupied electronic structure of thin epitaxial CoSi2 films grown on Si(111) substrates was studied using time-resolved two-photon photoemission and valence-band photoemission spectroscopy. The work function of the sample surfaces and the Schottky barrier height at the metal-semiconductor interface were measured as a function of annealing temperature. The photoemission data reveal several occupied and unoccupied electronic states which exhibit a high sensitivity to the annealing temperature. Time-resolved measurements show a behavior typical for a short-lived hot-electron gas and indications for an image-potential resonance.
APA:
Kutschera, M., Groth, T., Kentsch, C., Shumay, I., Weinelt, M., & Fauster, T. (2009). Electronic structure of CoSi2 films on Si(111) studied using time-resolved two-photon photoemission. Journal of Physics: Condensed Matter, 21. https://dx.doi.org/10.1088/0953-8984/21/13/134006
MLA:
Kutschera, Michael, et al. "Electronic structure of CoSi2 films on Si(111) studied using time-resolved two-photon photoemission." Journal of Physics: Condensed Matter 21 (2009).
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